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| NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HS945 APPLICATIONS The H945 is designed for driver stage of AF amplifier And low speed switching. ABSOLUTE MAXIMUM RATINGS a=25ae(c) T T stg Storage Temperature---------55~150ae T j Junction Temperature------------150ae PCCollector Dissipation------------250mW VCBO Collector- Base Voltage-----------60V VCEO Collector-Emitter Voltage----------50V VE B O Emitter -Base Voltage-----------5V I C Collector Current ------------150mA 1D Emitter E 2D Base B 3D Collector C TO-92 ELECTRICAL CHARACTERISTICS a=25ae(c) T Characteristics Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Min 60 50 5 Typ Max Unit V V V Test Conditions Symbol BVCBO BVCEO BVEBO HFE VCE(sat) VBE(sat) ICBO IEBO fT Cob NF IC=100|I A, IC=100|I A, IE=0 IB=0 DC Current Gain Collector- Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cut-off Current 70 700 0. 3 1. 0 100 IE=100|I IC=0 A VCE=6V, IC=1mA IC=100mA, IB=10mA IC=100mA, IB=10mA VCB=60V, IE=0 VEB=5V, IC=0 VCE=6V, IC=10mA VCB=6V, IE=0 f=1MHz V =6V,I C CE =0.5mA f= 1KHz Rs=500| V V nA Emitter Cut-off Current Current Gain-Bandwidth Product 30 0 100 2.5 4.0 nA MHz Output Capacitance Noise Figure pF dB hFE Classification O 70 140 Y 1 20 240 GR 200 0 40 BL 350 700 |
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